Toshiba CD6-R Series read-intensive data center NVMe™ SSD
Manufacturer Part Number:
KCD6XLUL960G
Features and Benefits:
The CD6-R Series is a read-intensive data center NVMe™ SSD that is optimized to support a broad range of scale-out and cloud applications, including big data/IoT, online transaction processing, and virtualization. Built with a PCIe® Gen4 x4 interface, CD6-R Series SSDs de- liver consistent performance up to 1M IOPS (random read) and 85 KIOPS (random write), with active power consumption of 13-19 W.
Featuring KIOXIA Corporation's 96-layer BiCS FLASH™ 3D TLC memory, CD6-R SSDs deliver 1 DWPD (Drive Writes Per Day) of endurance and storage capacities up to 15.36 TB in a 2.5-inch form factor, making them well-suited for hyperscale data center applications.
Key Features
- PCIe® 4.0, NVMe™ 1.4 specification compliant
- Form factor: 2.5-inch, 15mm Z-height
- Proprietary KIOXIA architecture: controller, firmware and BiCS FLASH™ 96-layer 3D TLC
- SFF-TA-1001 conformant (U.3), works with Tri-mode controllers and backplanes
- Single-port design, optimized for data center class workloads
- 6th generation, two-die failure recovery and double parity protection
- Consistent performance and reliability for demanding 24x7 environments
- Designed for high-density storage deployments
- Power loss protection (PLP) and end-to-end data correction
- Data security options: SIE, SED, FIPS 140-2
- Six power mode settings
Key Applications
- Hyperscale
- IoT and big data analytics
- Online transaction processing (OLTP)
(transactional and relational databases)
- Virtualized environments
- Streaming media and content delivery networks
SPECIFICATIONS:
| Capacity |
960 GB |
| Physical |
| Interface Specification |
PCIe® 4.0, NVMe™ 1.4 |
| Interface Speed |
64 GT/s (Gen4 x4) |
| Memory Type |
BiCS FLASH™ TLC |
| Performance in single port (1x4) mode(Up to) |
| Sustained 128 KiB Sequential Read |
5,800 MB/s |
| Sustained 128 KiB Sequential Write |
1,300 MB/s |
| Sustained 4 KiB Random Read |
700,000 IOPS |
| Sustained 4 KiB Random Write |
30,000 IOPS |
| Power Requirements |
| Supply Voltage |
12 V ± 10%, 3.3 Vaux ± 15% |
| Power Consumption (Active) |
13 W Typ. |
| Power Consumption (Ready) |
5.0 W Typ. |
| Reliability |
| MTTF |
2,500,000 hours |
| Warranty |
5 years |
| DWPD |
1 |
| Mechanical |
| Height |
15.0 mm + 0, - 0.5 mm |
| Width |
69.85 ± 0.25 mm |
| Length |
100.45 mm Max |
| Weight |
130 g Max. |
| Environmental |
| Temperature (Operating) |
0 °C to 70 °C |
| Humidity (Operating) |
5 % to 95 % R.H. |
| Vibration (Operating) |
21.27 m/s2 { 2.17 Grms } ( 5 to 800 Hz ) |
| Shock (Operating) |
9,800 m/s2 { 1,000 G } ( 0.5 ms duration ) |
*SIE option supports Crypto Erase, which is a standardized feature defined by NVM Express Inc.
